Autor/-in: Joachim Knoch

Joachim Knoch studied physics at RWTH Aachen University and Queen Mary, University of London; he obtained the MSc and PhD degrees in physics from RWTH Aachen University in 1998 and 2001, respectively. In his PhD dissertation he worked on the modeling and realization of ultrashort channel silicon MOSFETs. After the PhD, he joined the Microsystem Technology Laboratory, Massachusetts Institute of Technology as a postdoctoral fellow working on InP HEMTs. Between 2003 and 2006 he was a researcher at the Forschungszentrum Jülich in Jülich/Germany where he investigated tunnel FETs as well as Schottky-barrier transistors. In 2006 he accepted a position as research staff member at IBM’s Zurich Research Laboratory in Switzerland continuing to study tunnel FETs based on nanowires. He was appointed associate professor of electrical engineering at TU Dortmund University, Dortmund/Germany in 2008 and since 2011 he has been full professor of electrical engineering at RWTH Aachen University. His current research interests cover nanoelectronics devices based on group IV materials as well as 2D materials for low power, cryogenic and neuromorphic applications.